2024, Vol. 5, Issue 2, Part A
Thermal and electrical performance of IGBT devices with deep trench SiO₂ and high-k dielectrics
Author(s): João Silva, Ana Pereira and Luís Fernandes
Abstract: This study investigates the thermal and electrical performance of Insulated Gate Bipolar Transistor (IGBT) devices enhanced with deep trench silicon dioxide (SiO₂) and high-k dielectric materials. The objective was to evaluate the thermal management capabilities of deep trench SiO₂, analyze the impact of high-k dielectrics on switching efficiency and gate leakage current, and determine the combined effects of these materials on overall device reliability and longevity. Advanced fabrication techniques, including reactive ion etching (RIE) for trench structures and atomic layer deposition (ALD) for high-k dielectric layers, were employed to develop optimized IGBT prototypes. Thermal and electrical characterizations were performed using infrared thermography, semiconductor parameter analyzers, and finite element analysis (FEA) simulations. Statistical tools, including one-way ANOVA, Pearson’s correlation coefficient, and Weibull reliability analysis, validated the results. The findings revealed a 42% reduction in thermal resistance and a 33% decrease in maximum junction temperature in devices combining deep trench SiO₂ and high-k dielectrics. Gate leakage current decreased by 45%, while breakdown voltage increased by 23.5%. Reliability testing indicated a 48% improvement in mean time to failure (MTTF) and a 47% reduction in failure rate, supported by Weibull analysis (β = 1.45). Numerical simulations confirmed these experimental results, demonstrating reduced thermal gradients and uniform heat distribution. The study concludes that integrating deep trench SiO₂ and high-k dielectrics synergistically enhances thermal performance, electrical efficiency, and reliability of IGBT devices. Practical recommendations include optimizing fabrication processes, implementing advanced cooling systems, and conducting large-scale reliability testing for real-world applications. These advancements pave the way for developing highly efficient power modules for renewable energy systems, electric vehicles, and industrial motor drives, offering a transformative impact on power electronics technology.
DOI: 10.22271/27084531.2024.v5.i2a.74
Pages: 38-45 | Views: 68 | Downloads: 26
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How to cite this article:
João Silva, Ana Pereira, Luís Fernandes. Thermal and electrical performance of IGBT devices with deep trench SiO₂ and high-k dielectrics. Int J Res Circuits Devices Syst 2024;5(2):38-45. DOI: 10.22271/27084531.2024.v5.i2a.74
