International Journal of Research in Circuits, Devices and Systems
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P-ISSN: 2708-4531, E-ISSN: 2708-454X

International Journal of Research in Circuits, Devices and Systems


2021, Vol. 2, Issue 2, Part A
On increasing of density of elements of a differential-drive CMOS heterorectifier. On influence of missmatch-induced stress and porosity of materials on technological process


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase density of field-effect transistors in the framework of a differential-drive CMOS rectifier. Framework the approach we consider manufacturing the rectifier in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Pages: 77-86 | Views: 118 | Downloads: 34

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How to cite this article:
EL Pankratov. On increasing of density of elements of a differential-drive CMOS heterorectifier. On influence of missmatch-induced stress and porosity of materials on technological process. Int J Res Circuits Devices Syst 2021;2(2):77-86.
International Journal of Research in Circuits, Devices and Systems