International Journal of Research in Circuits, Devices and Systems
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P-ISSN: 2708-4531, E-ISSN: 2708-454X

International Journal of Research in Circuits, Devices and Systems


2021, Vol. 2, Issue 1, Part A
On analytical approach to prognosis of manufacturing of field-effect heterotransistors framework a comparator with account missmatch induced stress. An approach to increase their density


Author(s): EL Pankratov

Abstract: In this paper we introduce an analytical approach for analysis of manufacturing of field-effect transistors framework low-power dynamic comparator used in the far-end and near-end crosstalk adaptation loop. The approach gives a possibility to analyze mass and heat transport in multilayer structures without crosslinking of solutions on interfaces between layers. The approach also gives a possibility to take into account spatial and temporal variation of parameters of considered processes. Based on this approach we analyzed manufacturing of the considered comparator to increase density of elements.

Pages: 01-24 | Views: 467 | Downloads: 198

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How to cite this article:
EL Pankratov. On analytical approach to prognosis of manufacturing of field-effect heterotransistors framework a comparator with account missmatch induced stress. An approach to increase their density. Int J Res Circuits Devices Syst 2021;2(1):01-24.
International Journal of Research in Circuits, Devices and Systems